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| NSS12200WT1G 12 V, 3 A, Low VCE(sat) PNP Transistor ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU's control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. Features http://onsemi.com 12 VOLTS 3.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 163 mW COLLECTOR 1, 2, 5, 6 3 BASE 4 EMITTER * * * * * High Current Capability (3 A) High Power Handling (Up to 650 mW) Low VCE(s) (170 mV Typical @ 1 A) Small Size This is a Pb-Free Device Benefits * High Specific Current and Power Capability Reduces Required PCB Area * Reduced Parasitic Losses Increases Battery Life MAXIMUM RATINGS (TA = 25C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector Current - Peak Electrostatic Discharge Symbol VCEO VCBO VEBO IC ICM ESD Max -12 -12 -5.0 -2.0 -3.0 Unit Vdc Vdc Vdc Adc 1 SC-88/SOT-363 CASE 419B STYLE 20 DEVICE MARKING 6 V2M G 1 V2 = Specific Device Code M = Date Code G = Pb-Free Package HBM Class 3 MM Class C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ORDERING INFORMATION Device NSS12200WT1G Package Shipping SOT-363 3000/Tape & Reel (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2005 1 June, 2005 - Rev. 0 Publication Order Number: NSS12200W/D NSS12200WT1G THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Lead 6 Total Device Dissipation (Single Pulse < 10 sec.) Junction and Storage Temperature Range Symbol PD (Note 1) Max 450 3.6 RqJA (Note 1) PD (Note 2) 275 650 5.2 RqJA (Note 2) RqJL PD Single TJ, Tstg 192 105 1.4 -55 to +150 Unit mW mW/C C/W mW mW/C C/W C/W W C ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage, (IC = -10 mAdc, IB = 0) Collector -Base Breakdown Voltage, (IC = -0.1 mAdc, IE = 0) Emitter -Base Breakdown Voltage, (IE = -0.1 mAdc, IC = 0) Collector Cutoff Current, (VCB = -12 Vdc, IE = 0) Collector-Emitter Cutoff Current, (VCES = -12 Vdc, IE = 0) Emitter Cutoff Current, (VCES = -5.0 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (Note 3) (IC = -0.5 A, VCE = -1.5 V) (IC = -0.8 A, VCE = -1.5 V) (IC = -1.0 A, VCE = -1.5 V) Collector -Emitter Saturation Voltage (Note 3) (IC = -0.5 A, IB = -10 mA) (IC = -0.8 A, IB = -16 mA) (IC = -1.0 A, IB = -20 mA) Base -Emitter Saturation Voltage (Note 3) (IC = -1.0 A, IB = -20 mA) Base -Emitter Turn-on Voltage (Note 3) (IC = -1.0 A, VCE = -1.5 V) Cutoff Frequency (IC = -100 mA, VCE = -5.0 V, f = 100 MHz) Output Capacitance (VCB = -1.5 V, f = 1.0 MHz) 1. FR-4, Minimum Pad, 1 oz Coverage. 2. FR-4, 1 Pad, 1 oz Coverage. 3. Pulsed Condition: Pulse Width < 300 msec, Duty Cycle < 2%. hFE 100 100 100 VCE(sat) - - - VBE(sat) - VBE(on) - fT - Cobo - 50 65 100 - pF -0.81 -0.95 MHz -0.84 -0.95 V -0.10 -0.14 -0.17 -0.160 -0.235 -0.290 V 180 165 160 - 300 - V V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICES IEBO -12 -12 -5.0 - - - -15 -25 -7.0 -0.02 -0.03 -0.03 - - - -0.1 -0.1 -0.1 Vdc Vdc Vdc mAdc mAdc mAdc Symbol Min Typ Max Unit http://onsemi.com 2 NSS12200WT1G VCE, COLLECTOR EMITTER VOLTAGE (V) 0.5 VCE, COLLECTOR EMITTER VOLTAGE (V) 0.5 0.4 2A 0.3 0.4 0.3 0.2 1A 800 mA IC = 100 mA 500 mA 100 0.2 IC/IB = 100 0.1 0 1 0.1 0 0.001 IC/IB = 10 0.1 0.01 IC, COLLECTOR CURRENT (AMPS) 1 10 IB, BASE CURRENT (mA) Figure 1. Collector Emitter Voltage vs. Base Current Figure 2. Collector Emitter Voltage vs. Collector Current 400 125C hFE, DC CURRENT GAIN 300 VBE, BASE EMITTER VOLTAGE (V) VCE = 1.5 V 1.0 0.9 0.8 0.7 25C 0.6 0.5 0.4 0.3 0.001 0.01 0.1 1 0.001 0.01 0.1 IC, COLLECTOR CURRENT (AMPS) 125C VCE = 1.5 V 1 TA = -55C 200 25C 100 TA = -55C 0 IC, COLLECTOR CURRENT (AMPS) VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) Figure 3. DC Current Gain vs. Collector Current Figure 4. Base Emitter Voltage vs. Collector Current 1.0 IC, COLLECTOR CURRENT (A) 10 0.9 IC/IB = 10 dc 1 1s 100 ms 10 ms 1 ms 0.8 IC/IB = 100 0.7 0.1 SINGLE PULSE TA = 25C 0.6 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 0.01 0.1 1 10 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 5. Base Emitter Saturation Voltage vs. Base Current Figure 6. Safe Operating Area http://onsemi.com 3 NSS12200WT1G r(t), MINIMUM PAD NORMALIZED TRANSIENT THERMAL RESISTANCE 1 D = 0.50 D = 0.20 0.1 D = 0.10 D = 0.05 D = 0.02 0.01 D = 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1 10 100 1000 Figure 7. Normalized Thermal Response http://onsemi.com 4 NSS12200WT1G PACKAGE DIMENSIONS SC-88/SC70-6/SOT-363 CASE 419B-02 ISSUE V D e NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B-01 OBSOLETE, NEW STANDARD 419B-02. MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 6 5 4 HE 1 2 3 -E- b 6 PL 0.2 (0.008) M E M DIM A A1 A3 b C D E e L HE A3 C A STYLE 20: PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. EMITTER 5. COLLECTOR 6. COLLECTOR A1 L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 NSS12200WT1G ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 NSS12200W/D |
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